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IXTP270N04T4

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IXTP270N04T4

MOSFET N-CH 40V 270A TO220AB

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

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The IXYS IXTP270N04T4 is an N-Channel Power MOSFET from the Trench series, designed for high-current applications. This component features a Drain-Source Voltage (Vdss) of 40V and a continuous Drain current (Id) of 270A at 25°C (Tc), with a maximum power dissipation of 375W (Tc). The Rds On is specified at a low 2.4mOhm maximum at 50A and 10V gate drive. Key parameters include an input capacitance (Ciss) of 9140 pF (Max) at 25V and a gate charge (Qg) of 182 nC (Max) at 10V. The device operates with a gate-source voltage (Vgs) range of ±15V and a threshold voltage (Vgs(th)) of 4V (Max) at 250µA. It is housed in a TO-220-3 package with through-hole mounting and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for power switching and control circuits across various industrial sectors.

Additional Information

Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C270A (Tc)
Rds On (Max) @ Id, Vgs2.4mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)375W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9140 pF @ 25 V

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