IXTP24N65X2M
MOSFET N-CH 650V 24A TO220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP24N65X2M is an N-Channel MOSFET from the Ultra X2 series, packaged in a TO-220 Isolated Tab. This device features a Drain to Source Voltage (Vdss) of 650V and a continuous Drain current (Id) of 24A at 25°C. With a low Rds On of 145mOhm maximum at 12A and 10V Vgs, and a Gate Charge (Qg) of 36 nC maximum at 10V, it is suitable for high-efficiency power switching applications. The maximum power dissipation is rated at 37W (Tc). This component finds application in power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: Ultra X2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 Isolated Tab |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2060 pF @ 25 V |
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