IXTP230N04T4M
MOSFET N-CH 40V 230A TO220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTP230N04T4M is a Trench MOSFET N-Channel device designed for high-power applications. This component features a Drain-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 230A at 25°C (Tc), with a maximum power dissipation of 40W (Tc). The Rds On is rated at a maximum of 2.9mOhm at 115A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 140 nC @ 10V and an Input Capacitance (Ciss) of 7400 pF @ 25V. The device utilizes 10V for optimal Rds(On) performance and has a Vgs(th) of 4V @ 250µA. It operates within a temperature range of -55°C to 175°C (TJ) and is housed in a TO-220-3 Full Pack, Isolated Tab package for through-hole mounting. This MOSFET is suitable for use in power management systems and high current switching applications across various industrial sectors.
Additional Information
Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 230A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 115A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 Isolated Tab |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7400 pF @ 25 V |
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