IXTP230N04T4
MOSFET N-CH 40V 230A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTP230N04T4 is a N-Channel Trench MOSFET with a Drain-to-Source Voltage (Vdss) of 40 V. This component offers a continuous Drain current (Id) of 230 A at 25°C (Tc) and a maximum power dissipation of 340 W (Tc). The low on-resistance is specified as 2.9 mOhm at 115 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 140 nC at 10 V and an input capacitance (Ciss) of 7400 pF at 25 V. The device features a maximum gate-source voltage (Vgs) of ±15V and a threshold voltage (Vgs(th)) of 4V at 250µA. Packaged in a TO-220-3 through-hole configuration, the IXTP230N04T4 operates within a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for high-current switching applications across various sectors including industrial automation and power management.
Additional Information
Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 230A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 115A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 340W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7400 pF @ 25 V |
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