IXTP220N075T
MOSFET N-CH 75V 220A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS presents the IXTP220N075T, an N-Channel Power MOSFET from the TrenchMV™ series. This through-hole component features a Drain-Source Voltage (Vdss) of 75V and a continuous Drain Current (Id) of 220A at 25°C case temperature. The device offers a low on-resistance (Rds On) of 4.5mOhm at 25A and 10V gate-source voltage. With a maximum power dissipation of 480W (Tc) and a junction-to-case thermal resistance, it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 165 nC at 10V and input capacitance (Ciss) of 7700 pF at 25V. The IXTP220N075T is packaged in a standard TO-220-3 package and operates across a wide temperature range of -55°C to 175°C (TJ). This component is utilized in power conversion, electric vehicle powertrains, and industrial motor control applications.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 220A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 165 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7700 pF @ 25 V |
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