IXTP20N65XM
MOSFET N-CH 650V 9A TO220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTP20N65XM, an N-Channel MOSFET from the Ultra X series, offers a 650V drain-source voltage (Vdss). This component features a continuous drain current of 9A at 25°C (Tc) and a maximum power dissipation of 63W (Tc). With a low on-resistance (Rds On) of 210mOhm at 10A and 10V, it is designed for efficient power switching applications. The TO-220-3 package is suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 35nC at 10V and input capacitance (Ciss) of 1390pF at 25V. Operating temperature range is -55°C to 150°C (TJ). This device is commonly utilized in power supply units and industrial motor control systems.
Additional Information
Series: Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1390 pF @ 25 V |
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