IXTP20N65X
MOSFET N-CH 650V 20A TO220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP20N65X is an N-Channel MOSFET from the Ultra X series, housed in a TO-220-3 package. This component features a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 20A at 25°C (Tc). With a maximum power dissipation of 320W (Tc), it is suitable for high-power applications. The on-resistance (Rds On) is specified at 210mOhm maximum at 10A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 35 nC maximum at 10V and input capacitance (Ciss) of 1390 pF maximum at 25V. This device is designed for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). It finds application in power supply, motor control, and industrial applications.
Additional Information
Series: Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 320W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1390 pF @ 25 V |
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