IXTP200N075T
MOSFET N-CH 75V 200A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTP200N075T is an N-Channel TrenchMV™ MOSFET designed for high-power switching applications. This component features a 75V drain-to-source breakdown voltage (Vdss) and a continuous drain current (Id) of 200A at 25°C (Tc). Its low on-resistance (Rds On) is specified at a maximum of 5mOhm at 25A and 10V gate-source voltage (Vgs). The device offers a maximum power dissipation of 430W (Tc) and a high operating temperature range from -55°C to 175°C. Key parameters include a gate charge (Qg) of 160 nC at 10V Vgs and an input capacitance (Ciss) of 6800 pF at 25V Vds. The IXTP200N075T is housed in a standard TO-220-3 through-hole package and is suitable for use in power conversion, industrial motor control, and electric vehicle power systems.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 430W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
Request a Quote
Clients Also Buy
IXTA152N085T7
MOSFET N-CH 85V 152A TO263-7
IXTA180N085T
MOSFET N-CH 85V 180A TO263
IXTA180N085T7
MOSFET N-CH 85V 180A TO263-7