IXTP1R4N60P
MOSFET N-CH 600V 1.4A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP1R4N60P is a high-voltage N-Channel Power MOSFET from the PolarHV™ series. This device features a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 1.4A at 25°C, with a maximum power dissipation of 50W (Tc). The Rds(On) is specified at a maximum of 9 Ohms at 700mA and 10V gate drive. Key characteristics include a gate charge (Qg) of 5.2 nC at 10V and input capacitance (Ciss) of 140 pF at 25V. Designed for through-hole mounting, it is supplied in a TO-220-3 package. This component is suitable for applications in power supplies, industrial motor control, and electric vehicle charging systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 9Ohm @ 700mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 25µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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