IXTP1N80
MOSFET N-CH 800V 750MA TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTP1N80 is an N-Channel Power MOSFET designed for high voltage applications. This through-hole component features a Drain-Source Voltage (Vdss) of 800V and a continuous Drain Current (Id) of 750mA at 25°C (Tc). With a maximum power dissipation of 40W (Tc) and a low on-resistance of 11 Ohms at 500mA and 10V gate drive, it offers efficient switching. Key parameters include a gate charge of 8.5 nC and input capacitance of 220 pF at 25V. The IXTP1N80 is suitable for use in power supply, lighting, and industrial control applications. The device is packaged in a TO-220-3 configuration and operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 750mA (Tc) |
| Rds On (Max) @ Id, Vgs | 11Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 25µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 220 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFK90N20Q
MOSFET N-CH 200V 90A TO264AA
IXFH20N60
MOSFET N-CH 600V 20A TO-247AD
IXTH20N50D
MOSFET N-CH 500V 20A TO247
