IXTP1N100
MOSFET N-CH 1000V 1.5A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP1N100 is an N-Channel Power MOSFET designed for high voltage applications. This component features a maximum drain-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 1.5A at 25°C. With a low on-resistance (Rds On) of 11 Ohms maximum at 1A and 10V gate-source voltage, it offers efficient switching. The device has a gate charge (Qg) of 14.5 nC maximum at 10V and an input capacitance (Ciss) of 400 pF maximum at 25V. Packaged in a TO-220-3 through-hole configuration, it supports a maximum power dissipation of 54W at 25°C case temperature. Operating across a temperature range of -55°C to 150°C, the IXTP1N100 is suitable for power supply, industrial, and automotive applications requiring robust high-voltage switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 11Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 54W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 25µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
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