IXTP18N60PM
MOSFET N-CH 600V 9A TO220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP18N60PM is a Polar series N-Channel Power MOSFET designed for demanding applications. This component offers a 600V drain-to-source voltage (Vdss) and a continuous drain current of 9A at 25°C, with a maximum power dissipation of 90W. Featuring a low on-resistance of 420mOhm maximum at 9A and 10V gate drive, it minimizes conduction losses. The device is housed in a TO-220-3 Full Pack, Isolated Tab package, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 49 nC maximum and input capacitance (Ciss) of 2500 pF maximum. Operating temperature ranges from -55°C to 150°C. This MOSFET is utilized in power supply units, motor control, and industrial automation.
Additional Information
Series: PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-220 Isolated Tab |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
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