IXTP182N055T
MOSFET N-CH 55V 182A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTP182N055T is a TrenchMV™ series N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 182A at 25°C, with a maximum power dissipation of 360W. The low on-resistance (Rds On) of 5mOhm at 25A and 10V gate drive ensures minimal conduction losses. Key parameters include a gate charge (Qg) of 114 nC at 10V and input capacitance (Ciss) of 4850 pF at 25V. The IXTP182N055T is packaged in a TO-220-3 through-hole configuration, suitable for demanding thermal management. This component is widely utilized in industrial power supplies, motor control, and automotive applications where robust performance and low power loss are critical. The operating temperature range is -55°C to 175°C.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 182A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4850 pF @ 25 V |
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