IXTP180N055T
MOSFET N-CH 55V 180A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTP180N055T is an N-Channel Power MOSFET designed for high-current switching applications. This component offers a 55V drain-source breakdown voltage and a continuous drain current capability of 180A at 25°C (Tc). Its TO-220-3 through-hole package facilitates robust mounting and thermal management. The MOSFET technology ensures efficient operation with a gate threshold voltage (Vgs(th)) of 4V at 1mA. This device is suitable for applications in power supply units, motor control, and industrial automation where high power density and reliable switching are critical. The component is supplied in tube packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220-3 |
| Drain to Source Voltage (Vdss) | 55 V |
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