IXYS IXTP16N50PM: A high-performance N-channel Power MOSFET designed for demanding applications. This discrete semiconductor component features a 500V drain-source breakdown voltage and a continuous drain current rating of 16A, with a pulsed capability of 64A. The low on-resistance (RDS(on)) of 0.35 Ohms at VGS = 10V ensures efficient power delivery and minimal heat generation. Packaged in a standard TO-220AB (non-isolated) package, it offers robust thermal performance and ease of integration into existing board layouts. Ideal for power supply units, motor control, and high-voltage switching circuits, this MOSFET is a reliable choice for industrial and high-power consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk