IXTP160N075T
MOSFET N-CH 75V 160A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP160N075T is a high-performance N-Channel TrenchMV™ MOSFET designed for demanding applications. This device features a 75V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 160A at 25°C, with a maximum power dissipation of 360W (Tc). The low on-resistance (Rds On) of 6mOhm at 25A and 10V gate-source voltage (Vgs) ensures efficient power transfer. Key characteristics include a gate charge (Qg) of 112 nC at 10V and input capacitance (Ciss) of 4950 pF at 25V. The IXTP160N075T is housed in a TO-220-3 package with a through-hole mounting type, suitable for operating temperatures from -55°C to 175°C. This component is commonly utilized in power management, automotive, and industrial control systems.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 112 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4950 pF @ 25 V |
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