IXTP130N065T2
MOSFET N-CH 65V 130A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP130N065T2 is an N-Channel power MOSFET from the TrenchT2™ series, designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 65V and a continuous drain current (Id) capability of 130A at 25°C (Tc), with a maximum power dissipation of 250W (Tc). The low on-resistance (Rds On) of 6.6mOhm at 50A and 10V gate drive ensures minimal conduction losses. Key parameters include a gate charge (Qg) of 79nC (Max) at 10V and an input capacitance (Ciss) of 4800pF (Max) at 25V. The IXTP130N065T2 is housed in a standard TO-220-3 package, suitable for through-hole mounting. Its operating temperature range is -55°C to 175°C (TJ). This MOSFET is utilized in various industrial sectors, including power supplies, motor control, and automotive electronics.
Additional Information
Series: TrenchT2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 65 V |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |
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