IXTP110N12T2
MOSFET N-CH 120V 110A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP110N12T2 is an N-Channel Power MOSFET from the TrenchT2™ series, designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 120V and a continuous drain current (Id) of 110A at 25°C (Tc), with a maximum power dissipation of 517W (Tc). The optimized trench technology ensures a low on-resistance (Rds On) of 14mOhm at 55A and 10V gate drive. Key parameters include a gate charge (Qg) of 120 nC at 10V and an input capacitance (Ciss) of 6570 pF at 25V. The IXTP110N12T2 is housed in a TO-220-3 package, suitable for through-hole mounting, and operates across a wide temperature range of -55°C to 175°C (TJ). This device is commonly utilized in industrial power supplies, motor control, and automotive electronics.
Additional Information
Series: TrenchT2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 517W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6570 pF @ 25 V |
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