IXTP110N055T
MOSFET N-CH 55V 110A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTP110N055T is an N-Channel Power MOSFET from the Trench series. This component features a 55V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 110A at 25°C (Tc). With a low on-resistance (Rds On) of 7 mOhm at 25A and 10V, this device offers high efficiency for power switching applications. The IXTP110N055T has a maximum power dissipation of 230W (Tc) and a high junction temperature rating of 175°C. Key parameters include a gate charge (Qg) of 67 nC at 10V and input capacitance (Ciss) of 3080 pF at 25V. It is supplied in a TO-220-3 package for through-hole mounting and is suitable for use in industrial, automotive, and telecommunications sectors. The maximum gate-source voltage (Vgs) is ±20V.
Additional Information
Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3080 pF @ 25 V |
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