IXTP110N055P
MOSFET N-CH 55V 110A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTP110N055P is an N-Channel Power MOSFET from the Polar series, supplied in a TO-220-3 package. This component offers a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 110A at 25°C, with a maximum power dissipation of 390W at the same temperature. Featuring a low on-resistance (Rds On) of 13.5mOhm at 500mA and 10V, it also specifies a gate charge (Qg) of 76 nC at 10V. The input capacitance (Ciss) is rated at 2210 pF at 25V. This MOSFET is suitable for through-hole mounting and operates across a temperature range of -55°C to 175°C. Applications include power switching, motor control, and power distribution in industrial and automotive sectors.
Additional Information
Series: PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 390W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 25 V |
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