IXTP10N60PM
MOSFET N-CH 600V 5A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTP10N60PM is a 600V N-Channel Power MOSFET from the Polar series. This component is designed for high-voltage applications, featuring a continuous drain current of 5A (Tc) and a maximum power dissipation of 50W (Tc). The Rds On is specified at a maximum of 740mOhm at 5A and 10V gate drive. Key parameters include a gate charge (Qg) of 32 nC at 10V and input capacitance (Ciss) of 1610 pF at 25V. The device is housed in a standard TO-220-3 package with a through-hole mounting type. Operating temperature range is from -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 740mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1610 pF @ 25 V |
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