IXTP02N50D
MOSFET N-CH 500V 200MA TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP02N50D is a depletion mode, N-channel MOSFET designed for high voltage applications. This component features a 500V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 200mA at 25°C (Tc). With a maximum on-resistance (Rds On) of 30 Ohms at 50mA and 0V Vgs, it offers efficient switching characteristics. The input capacitance (Ciss) is rated at a maximum of 120 pF at 25V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a standard TO-220-3 package, suitable for through-hole mounting. Power dissipation is 1.1W (Ta) or 25W (Tc). This MOSFET is commonly employed in power control, switching power supplies, and high voltage circuits across various industrial sectors.
Additional Information
Series: DepletionRoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Tc) |
| Rds On (Max) @ Id, Vgs | 30Ohm @ 50mA, 0V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 1.1W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 25µA |
| Supplier Device Package | TO-220-3 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 25 V |
| Qualification | - |
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