IXTN79N20
MOSFET N-CH 200V 85A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTN79N20 is a high-performance N-Channel Power MOSFET designed for demanding applications. Featuring a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 85A at 25°C (Tc), this component offers robust power handling capabilities. The device is housed in a SOT-227B package, also known as miniBLOC, facilitating efficient chassis mounting and thermal management. With a maximum power dissipation of 400W (Tc), the IXTN79N20 is suitable for power conversion, motor control, and industrial power supply systems. The threshold voltage (Vgs(th)) is rated at 4V @ 20mA, ensuring reliable switching characteristics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 20mA |
| Supplier Device Package | SOT-227B |
| Drain to Source Voltage (Vdss) | 200 V |
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