IXTN660N04T4
MOSFET N-CH 40V 660A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTN660N04T4 is a Trench N-Channel MOSFET designed for high-power applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 660A at 25°C (Tc). With a maximum power dissipation of 1040W (Tc), it is suitable for demanding thermal environments. The low on-resistance of 0.85mOhm at 100A and 10V gate-source voltage (Vgs) minimizes conduction losses. Key parameters include a gate charge (Qg) of 860nC at 10V and input capacitance (Ciss) of 44000pF at 25V. The IXTN660N04T4 utilizes a SOT-227B chassis mount package, ensuring robust thermal management. Operating temperature range is -55°C to 175°C (TJ). This device is commonly found in power conversion, electric vehicle powertrains, and industrial motor control systems.
Additional Information
Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 660A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.85mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1040W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 860 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 44000 pF @ 25 V |
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