IXTN62N50L
MOSFET N-CH 500V 62A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTN62N50L is a 500V N-Channel Power MOSFET designed for demanding applications. This device features a continuous drain current (Id) of 62A at 25°C and a maximum power dissipation of 800W (Tc). The SOT-227B package, also known as miniBLOC, facilitates efficient chassis mounting and thermal management. Key parameters include a low Rds On of 100mOhm at 500mA and 20V, a gate charge (Qg) of 550 nC at 20V, and input capacitance (Ciss) of 11500 pF at 25V. With a drain-to-source voltage (Vdss) of 500V and a maximum gate-source voltage (Vgs) of ±30V, this MOSFET is suitable for power conversion, industrial motor control, and high-voltage switching applications. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: LinearRoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 500mA, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 800W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 550 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11500 pF @ 25 V |
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