IXTN36N50
MOSFET N-CH 500V 36A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTN36N50 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 36 A at 25°C (Tc). With a maximum power dissipation of 400 W (Tc), it is suitable for high-power switching and amplification tasks. The device is housed in a SOT-227B (miniBLOC) package, facilitating chassis mounting for efficient thermal management. Its robust construction and specified parameters make it a reliable choice for industrial motor control, power supplies, and high-voltage switching circuits. The typical gate threshold voltage (Vgs(th)) is 4V at 20mA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 20mA |
| Supplier Device Package | SOT-227B |
| Drain to Source Voltage (Vdss) | 500 V |
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