IXTN320N10T
MOSFET N-CH 100V 320A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTN320N10T is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 320A at 25°C (Tc). With a maximum power dissipation of 680W (Tc), it is well-suited for high-power switching and control tasks. The MOSFET is housed in a SOT-227B (miniBLOC) package, enabling efficient chassis mounting for thermal management. Key electrical characteristics include a gate-source voltage (Vgs) tolerance of ±20V and a threshold voltage (Vgs(th)) of 4.5V at 1mA. This device is commonly utilized in power conversion, industrial motor control, and high-current switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 320A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 680W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
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