IXTN21N100
MOSFET N-CH 1000V 21A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTN21N100 is an N-Channel MOSFET from the MegaMOS™ series. This component features a Drain-to-Source Voltage (Vdss) of 1000V and a continuous Drain Current (Id) of 21A at 25°C (Tc). It offers a maximum power dissipation of 520W (Tc) and a typical Rds On of 550mOhm at 500mA and 10V. The device is characterized by a gate charge (Qg) of 250 nC at 10V and an input capacitance (Ciss) of 8400 pF at 25V. Designed for chassis mounting, it utilizes the SOT-227B package. This MOSFET is suitable for high-voltage applications in power supply, industrial, and automotive sectors.
Additional Information
Series: MegaMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 500µA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8400 pF @ 25 V |
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