IXTN120N25
MOSFET N-CH 250V 120A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTN120N25 is an N-Channel Power MOSFET from the MegaMOS™ series. This device features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 120A at 25°C (Tc). With a maximum power dissipation of 730W (Tc) and a low on-resistance (Rds On) of 20mOhm at 500mA and 10V, it is suitable for high-power switching applications. Key parameters include a gate charge (Qg) of 360nC (max) at 10V and input capacitance (Ciss) of 7700pF (max) at 25V. The IXTN120N25 is housed in a SOT-227B package, designed for chassis mounting, and operates within a temperature range of -55°C to 150°C (TJ). This component is utilized in industries such as industrial power supplies, motor control, and welding equipment.
Additional Information
Series: MegaMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 730W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-227B |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7700 pF @ 25 V |
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