IXTM67N10
MOSFET N-CH 100V 67A TO204AEManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTM67N10 is a high-performance N-Channel GigaMOS™ Power MOSFET designed for demanding applications. This component features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) rating of 67A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The low on-resistance of 25mOhm is achieved at 33.5A and a gate-source voltage of 10V, indicating efficient power handling. Key parameters include a gate charge (Qg) of 260 nC at 10V and input capacitance (Ciss) of 4500 pF at 25V. The IXTM67N10 utilizes Through Hole mounting in a TO-204AE package, operating across a temperature range of -55°C to 150°C. This device is suitable for power conversion, motor control, and industrial power supply applications.
Additional Information
Series: GigaMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-204AE |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 33.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-204AE |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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