IXTM5N100A
MOSFET N-CH 1000V 5A TO204AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTM5N100A is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 1000V and a continuous Drain Current (Id) of 5A at 25°C. With a maximum power dissipation of 180W (Tc), it is suitable for demanding power conversion and control circuits. The device exhibits a low on-resistance (Rds On) of 2 Ohms maximum at 2.5A, 10V, and a gate charge (Qg) of 130 nC maximum at 10V. Input capacitance (Ciss) is rated at 2600 pF maximum at 25V. The IXTM5N100A utilizes through-hole mounting in a TO-204AA (IXTM) package, facilitating robust PCB integration. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly employed in power supplies, industrial motor control, and high-voltage switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-204AA (IXTM) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
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