IXTM5N100
MOSFET N-CH 1000V 5A TO204AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTM5N100 is an N-Channel Power MOSFET designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 1000V and a continuous drain current (Id) of 5A at 25°C. The device offers a low on-resistance of 2.4 Ohms maximum at 2.5A and 10V gate drive. With a maximum power dissipation of 180W (Tc), the IXTM5N100 is suitable for demanding power conversion and control circuits. Key parameters include a gate charge (Qg) of 130 nC at 10V and input capacitance (Ciss) of 2600 pF at 25V. The component is housed in a TO-204AA (IXTM) package, facilitating through-hole mounting. This MOSFET is utilized across various industrial sectors, including power supplies, motor drives, and lighting applications. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-204AA (IXTM) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
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