IXTM40N30
MOSFET N-CH 300V 40A TO204AEManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTM40N30 is an N-Channel GigaMOS™ power MOSFET designed for high-efficiency power switching applications. Featuring a drain-source voltage (Vdss) of 300 V and a continuous drain current (Id) of 40A at 25°C (Tc), this component offers a maximum power dissipation of 300W (Tc). Its low on-resistance (Rds On) of 88mOhm at 20A and 10V gate-source voltage (Vgs) minimizes conduction losses. The IXTM40N30 has a gate charge (Qg) of 220 nC at 10V and input capacitance (Ciss) of 4600 pF at 25V. Packaged in a TO-204AE through-hole mount, it operates within a temperature range of -55°C to 150°C, suitable for industrial, power supply, and motor control systems.
Additional Information
Series: GigaMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-204AE |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 88mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-204AE |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 25 V |
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