IXTM12N100
MOSFET N-CH 1000V 12A TO204AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS GigaMOS™ IXTM12N100 is an N-Channel Power MOSFET designed for high voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 1000V and a continuous Drain Current (Id) of 12A at 25°C, with a maximum power dissipation of 300W (Tc). The IXTM12N100 has a low on-resistance of 1.05 Ohm maximum at 6A and 10V gate drive. Key parameters include a gate charge (Qg) of 170 nC maximum and input capacitance (Ciss) of 4000 pF maximum. It is packaged in a TO-204AA (TO-3) through-hole configuration and operates across a temperature range of -55°C to 150°C. This device is suitable for applications in power conversion, industrial motor control, and high-voltage switching.
Additional Information
Series: GigaMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-204AA (IXTM) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
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