IXTM11N80
MOSFET N-CH 800V 11A TO204AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTM11N80 is an N-channel power MOSFET from the GigaMOS™ series, designed for high voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 800V and a continuous drain current (Id) of 11A at 25°C. The device offers a maximum power dissipation of 300W (Tc) and a low on-resistance (Rds On) of 950mOhm at 5.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 170 nC at 10V and input capacitance (Ciss) of 4500 pF at 25V. The IXTM11N80 is housed in a TO-204AA (TO-3) package for through-hole mounting and operates within a temperature range of -55°C to 150°C. This MOSFET is suitable for power switching applications in industries such as industrial power supplies, motor control, and high-voltage power conversion.
Additional Information
Series: GigaMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-204AA (IXTM) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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