IXTK8N150L
MOSFET N-CH 1500V 8A TO264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTK8N150L is an N-Channel Power MOSFET designed for high voltage applications. This device features a Drain-Source Voltage (Vdss) of 1500 V and a continuous drain current (Id) of 8 A at 25°C. With a maximum power dissipation of 700 W (Tc), it is suitable for demanding power conversion and switching tasks. The MOSFET exhibits an Rds On (Max) of 3.6 Ohms at 4 A and 20 V gate drive, with a gate charge (Qg) of 250 nC at 15 V. Input capacitance (Ciss) is rated at 8000 pF at 25 V. The IXTK8N150L is housed in a TO-264 package for through-hole mounting and operates across a temperature range of -55°C to 150°C. Its robust design makes it a component choice in industries such as power supplies, industrial automation, and motor control.
Additional Information
Series: LinearRoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 4A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 700W (Tc) |
| Vgs(th) (Max) @ Id | 8V @ 250µA |
| Supplier Device Package | TO-264 (IXTK) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1500 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8000 pF @ 25 V |
Request a Quote
Clients Also Buy
IXTX8N150L
MOSFET N-CH 1500V 8A PLUS247-3
IXTK17N120L
MOSFET N-CH 1200V 17A TO264
IXTX22N100L
MOSFET N-CH 1000V 22A PLUS247-3
