IXTK80N25
MOSFET N-CH 250V 80A TO264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTK80N25 is a high-performance N-Channel Power MOSFET from the MegaMOS™ series. This through-hole component features a drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 80A at 25°C (Tc). With a maximum power dissipation of 540W (Tc), it is suitable for demanding applications. The Rds On (Max) is 33mOhm at 500mA and 10V, with a gate-source voltage (Vgs) tolerance up to ±20V. Key parameters include a typical input capacitance (Ciss) of 6000 pF at 25V and a gate charge (Qg) of 240 nC at 10V. The TO-264 (IXTK) package facilitates efficient heat management. This device finds application in high-power switching, motor control, and industrial power supplies.
Additional Information
Series: MegaMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-264 (IXTK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
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