IXTK62N25
MOSFET N-CH 250V 62A TO264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTK62N25, an N-Channel MegaMOS™ power MOSFET, offers a 250V drain-source voltage and 62A continuous drain current at 25°C (Tc). This component features a low on-resistance of 35mOhm maximum at 31A, 10V, and power dissipation up to 390W (Tc). The IXTK62N25 is housed in a TO-264 package for through-hole mounting, facilitating efficient thermal management. Key parameters include a gate charge of 240 nC at 10V and input capacitance of 5400 pF at 25V. Designed for demanding applications, this MOSFET is suitable for power conversion, motor control, and industrial power supplies. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: MegaMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 390W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-264 (IXTK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V |
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