IXTK33N50
MOSFET N-CH 500V 33A TO264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTK33N50 is an N-channel power MOSFET designed for high-power switching applications. This component features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 33 A at 25°C (Tc), with a maximum power dissipation of 416 W (Tc). The IXTK33N50 offers a low on-resistance (Rds On) of 170 mOhm at 500 mA and 10 V. It has a gate charge (Qg) of 250 nC at 10 V and input capacitance (Ciss) of 4900 pF at 25 V. The device operates over a temperature range of -55°C to 150°C (TJ) and is housed in a TO-264 (IXTK) package with through-hole mounting. This MOSFET is suitable for use in industrial power supplies, motor control, and other high-voltage applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 416W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-264 (IXTK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 25 V |
Request a Quote
Clients Also Buy
IXTQ250N075T
MOSFET N-CH 75V 250A TO3P
IXFB72N55Q2
MOSFET N-CH 550V 72A PLUS264
IXTY5N50P
MOSFET N-CH 500V 4.8A TO252
