IXTK250N10
MOSFET N-CH 100V 250A TO264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTK250N10 is a MegaMOS™ N-Channel Power MOSFET designed for high-power applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and offers a continuous drain current (Id) of 250A at 25°C (Tc), with a maximum power dissipation of 730W (Tc). The device exhibits a low on-resistance (Rds On) of 5mOhm at 90A and 10V gate drive. Key parameters include a gate charge (Qg) of 430 nC at 10V and input capacitance (Ciss) of 12700 pF at 25V. The IXTK250N10 is housed in a TO-264 package for through-hole mounting and operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in applications such as industrial motor control, power supplies, and electric vehicle systems.
Additional Information
Series: MegaMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 250A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 730W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-264 (IXTK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 430 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12700 pF @ 25 V |
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