IXTK17N120L
MOSFET N-CH 1200V 17A TO264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTK17N120L is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 17 A at 25°C. The device offers a maximum on-resistance (Rds On) of 900 mOhm at 8.5 A and 20 V gate-source voltage (Vgs). With a high power dissipation capability of 700 W (Tc), it is suitable for demanding power conversion and control systems. Key electrical characteristics include an input capacitance (Ciss) of 8300 pF at 25 V and a gate charge (Qg) of 155 nC at 15 V. Packaged in a TO-264 (IXTK) through-hole configuration, this IXYS MOSFET is utilized in industries such as industrial power supplies, solar inverters, and electric vehicle charging. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: LinearRoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 8.5A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 700W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-264 (IXTK) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8300 pF @ 25 V |
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