IXTK160N20
MOSFET N-CH 200V 160A TO264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTK160N20 is an N-Channel MegaMOS™ Power MOSFET designed for high-power switching applications. This device features a maximum drain-source voltage (Vdss) of 200V and a continuous drain current (Id) rating of 160A at 25°C (Tc). The low on-resistance, specified as 13mOhm maximum at 500mA and 10V Vgs, minimizes conduction losses. With a high continuous drain current capability and a maximum power dissipation of 730W (Tc), this MOSFET is suitable for demanding power conversion systems. It utilizes a TO-264 (IXTK) package for through-hole mounting, facilitating thermal management. Key parameters include a gate charge (Qg) of 415 nC (max) at 10V Vgs and input capacitance (Ciss) of 12900 pF (max) at 25V Vds. The IXTK160N20 is utilized in industries such as industrial power supplies and motor control. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: MegaMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 730W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-264 (IXTK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 415 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12900 pF @ 25 V |
Request a Quote
Clients Also Buy
IXTH21N50
MOSFET N-CH 500V 21A TO247
IXTH40N30
MOSFET N-CH 300V 40A TO247
IXTH67N10
MOSFET N-CH 100V 67A TO247
