IXTK140N30P
MOSFET N-CH 300V 140A TO264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTK140N30P is an N-Channel Power MOSFET from the Polar series, designed for high-power switching applications. This device features a maximum Drain-Source Voltage (Vdss) of 300V and a continuous Drain Current (Id) of 140A at 25°C (Tc). The on-state resistance (Rds On) is specified at a maximum of 24mOhm when driven at 70A and 10V gate-source voltage. Key electrical parameters include a typical input capacitance (Ciss) of 14800pF at 25V and a gate charge (Qg) of 185nC at 10V. The MOSFET is housed in a TO-264-3, TO-264AA package, suitable for through-hole mounting. This component is widely utilized in industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 5V @ 500µA |
| Supplier Device Package | TO-264 (IXTK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 185 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14800 pF @ 25 V |
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