IXTK128N15
MOSFET N-CH 150V 128A TO264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTK128N15 is an N-Channel MegaMOS™ power MOSFET designed for high-performance applications. Featuring a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 128A at 25°C (Tc), this component offers robust power handling capabilities with a maximum power dissipation of 540W (Tc). The device exhibits a low on-resistance (Rds On) of 15mOhm at 500mA and 10V gate-source voltage. Its gate charge (Qg) is specified at 240 nC maximum at 10V, and input capacitance (Ciss) is 6000 pF maximum at 25V. The IXTK128N15 utilizes through-hole mounting in a TO-264 package, making it suitable for power supply units, motor control systems, and industrial automation. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: MegaMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 128A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-264 (IXTK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
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