IXTK110N30
MOSFET N-CH 300V 110A TO264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTK110N30 is a MegaMOS™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 300V and a continuous drain current (Id) of 110A at 25°C (Tc), with a maximum power dissipation of 730W (Tc). The device exhibits a low on-resistance (Rds On) of 26mOhm at 10V and 500mA, facilitated by a 10V gate drive. Key parameters include input capacitance (Ciss) of 7800pF (max) and gate charge (Qg) of 390nC (max), both specified at 10V gate voltage. The IXTK110N30 is housed in a TO-264 package for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This device is commonly utilized in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: MegaMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 730W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-264 (IXTK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 390 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7800 pF @ 25 V |
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