IXTI10N60P
MOSFET N-CH 600V 10A TO262Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTI10N60P is a high-voltage N-Channel Power MOSFET from the PolarHV™ series. This component features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C (Tc), with a maximum power dissipation of 200W (Tc). The on-resistance (Rds On) is specified at 740mOhm maximum at 5A and 10V Vgs. Key parameters include a gate charge (Qg) of 32 nC maximum at 10V Vgs and an input capacitance (Ciss) of 1610 pF maximum at 25V Vds. The device is housed in a TO-262 (I2PAK) package, suitable for through-hole mounting. This component is designed for applications requiring high voltage switching, commonly found in power supplies, industrial motor control, and lighting applications. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±30V.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 740mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1610 pF @ 25 V |
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