IXTH88N15
MOSFET N-CH 150V 88A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH88N15 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) capability of 88A at 25°C. With a low on-resistance (Rds On) of 22mOhm at 44A and 10V Vgs, it minimizes conduction losses. The device boasts a maximum power dissipation of 400W (Tc) and a gate charge (Qg) of 170 nC at 10V. Its high switching speed and thermal performance make it suitable for use in power supplies, motor control, and industrial automation. The IXTH88N15 is housed in a standard TO-247-3 package for robust thermal management and ease of assembly. Operating temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
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