IXTH75N10
MOSFET N-CH 100V 75A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS MegaMOS™ IXTH75N10 is a high-performance N-Channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 75A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The device offers a low on-resistance (Rds On) of 20mOhm at 37.5A and 10V Vgs, and a gate charge (Qg) of 260nC at 10V. With an input capacitance (Ciss) of 4500pF at 25V and a gate-source voltage (Vgs) range of ±20V, it is suitable for high-current switching and power conversion tasks. The IXTH75N10 is housed in a robust TO-247-3 package for through-hole mounting, operating across an industrial temperature range of -55°C to 150°C. Its robust characteristics make it ideal for use in power supplies, motor control, and high-power industrial equipment.
Additional Information
Series: MegaMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 37.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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