IXTH72N20
MOSFET N-CH 200V 72A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH72N20 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 200V drain-source voltage (Vdss) and a continuous drain current (Id) of 72A at 25°C, with a maximum power dissipation of 400W (Tc). With a low on-resistance (Rds On) of 33mOhm at 500mA and 10V gate-source voltage (Vgs), it ensures efficient power transfer. The device utilizes advanced MOSFET technology and comes in a TO-247 package for robust thermal performance and ease of mounting via through-hole technology. Key electrical characteristics include a gate charge (Qg) of 170 nC @ 10V and input capacitance (Ciss) of 4400 pF @ 25V. The IXTH72N20 is suitable for use in power switching, motor control, and high-current industrial applications. It operates within an extended temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
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