IXTH6N90A
MOSFET N-CH 900V 6A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTH6N90A is a N-Channel Power MOSFET designed for high voltage applications. This device features a Drain-Source Voltage (Vdss) of 900V and a continuous Drain Current (Id) of 6A at 25°C. With a maximum On-Resistance (Rds On) of 1.4 Ohm at 3A and 10V gate drive, it offers efficient power handling with a maximum power dissipation of 180W (Tc). The IXTH6N90A utilizes MOSFET technology and is housed in a TO-247-3 package for through-hole mounting. Key parameters include a gate charge (Qg) of 130 nC at 10V and an input capacitance (Ciss) of 2600 pF at 25V. This component is suitable for use in power supplies, industrial motor control, and various high-voltage switching applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
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